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| BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BD896, BD898, BD900 and BD902 70 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD895 Collector-base voltage (IE = 0) BD897 BD899 BD901 BD895 Collector-emitter voltage (IB = 0) BD897 BD899 BD901 Base-emitter voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Operating free-air temperature range Operating junction temperature range Storage temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. VEBO IC IB Ptot Ptot TA Tj Tstg VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W C C C V V UNIT AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD895 V(BR)CEO IC = 100 mA IB = 0 (see Note 3) BD897 BD899 BD901 VCE = 30 V ICEO Collector-emitter cut-off current VCE = 30 V VCE = 40 V VCE = 50 V VCB = 45 V VCB = 60 V VCB = 80 V ICBO Collector cut-off current VCB = 100 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V IEBO hFE VCE(sat) VBE(on) VF Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VEB = VCE = IB = VCE = IF = 5V 3V 12 mA 3V 8A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = 3A 3A 3A TC = 100C TC = 100C TC = 100C TC = 100C (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 750 2.5 2.5 3.5 V V V BD895 BD897 BD899 BD901 BD895 BD897 BD899 BD901 BD895 BD897 BD899 BD901 MIN 45 60 80 100 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2 2 2 2 2 mA mA mA V TYP MAX UNIT NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.79 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = 3 A VBE(off) = -3.5 V IB(on) = 12 mA RL = 10 MIN IB(off) = -12 mA tp = 20 s, dc 2% TYP 1 5 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 50000 TCS130AD COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 TCS130AB hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 10000 1*5 1000 1*0 VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10 TC = -40C TC = 25C TC = 100C 0*5 0*5 1*0 IC - Collector Current - A 10 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C TCS130AC 2*5 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 10 Figure 3. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAS130AD IC - Collector Current - A 1*0 0*1 BD895 BD897 BD899 BD901 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C TIS130AB Figure 5. 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 |
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